Understanding Solid State Devices Made Easy

Relevant Course: Nil 

Relevant Department: Electrical Engineering 

Relevant Semester: Nil 

Pre- requisite :Nil 

Course Description and Outline:

Course Title: Understanding Solid State Devices Made Easy

At the end of the six hour session on Solid State Devices, you should be able to

  • state why study solid state devices.
  • sketch the current-voltage characteristics of a p-n junction, Bipolar Junction Transistor (BJT) and a Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
  • describe the evolution of solid state devices, namely – diodes and transistors.
  • state the steps involved in analysing a solid state device to obtain an equation for its current-voltage characteristics.
  • state how mobile charges are generated and transported in semiconductors.
  • explain the rectifying operation of a p-n junction and amplifying operation of a transistor - bipolar and MOS - without using equations or energy band diagrams.
  • explain the features and utility of the energy band diagram of a semiconductor.
  • write and explain the equations based on drift-diffusion carrier transport, that are employed to model a solid state device.
  • state some standard approximations employed to simplify the solution of the above equations.
  • state how to check and remember a device model equation, and what precautions should be taken while making calculations with it. 

Schedule for Lecture Delivery

Session 1 : 1-Sep-2015 (10 to 12 pm)

Session 2 : 3-Sep-2015 (10 to 12 pm)

Session 3 : 4-Sep-2015 (2 to 4 pm)

Teacher Forum

Handouts

Slides for Understanding Solid State Devices Made Easy

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Video Lectures for Session 1

Learning Outcomes

Evolution of solid state diodes and transistors

Analyzing a solid state device for its I-V equation
Generation of Mobile Charges in Semi Conductors
Contd...

 

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Video Lecture for Session 2

Summary
Transport of Mobile Charges in Semi Conductors.
 Analogy Illustrating Directed Motion Superimposed Over Random Motion
Rectifying Operation of a p-n Junction
Interaction.

Forum for Session 2

Forum for Session 2

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Video Lecture for Session 3

Learning Outcomes

Amplifying operation of a transistor

Metal Oxide Semi Conductors  Field Effect Transistors

Interaction

Features and Utility of Energy Band Diagrams 

 Interaction

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Forum for Session 3

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Assignment

        1)   Refer to the 3-dimensional arrangement of silicon atoms in a unit cell of

              silicon.Calculate the number of atoms in:

                  (a) one cm3 of silicon, and 

                  (b) one cm2 of the plane ABCD of the unit cell of silicon as shown next.

        2)   The dc current I through a diode obeys the following I-V equation, where               Is = 10 pA.

 

    Calculate the dc current I through the diode at 300 K in intervals of 0.025 V in reverse bias and 0.05     V in forward bias. Take kT = 0.025 V at 300 K. Tabulate your results and plot them on a graph sheet     in three different ways:

 

    a) forward current in mA and reverse current in pA; voltage range -0.2 to 0.5 V.

    b) both forward and reverse currents in mA; voltage range of - 0.2 to 0.5 V.

    c) both forward and reverse currents in pA; current range of -10 pA to 100 pA.

      

       (4) Explain in your own words the reasons for the following in a P-N junction.

      (a)    The space-charge region width on the heavily doped side is less than that on the lightly doped side.

      (b)   For a given magnitude of bias, the forward bias current is much larger than reverse bias current.

5) Explain in your own words how one can obtain a small-signal voltage gain using a bipolar junction transistor.

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Solutions

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Quiz - I

Quiz - I 

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